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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.21

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.50

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.33

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.36

1

onsemi N-Channel MOSFET Transistor, 84 A, 80 V, 8-Pin PQFN8 NTTFS5D9N08HTWG

onsemi N-Channel MOSFET Transistor, 84 A, 80 V, 8-Pin PQFN8 NTTFS5D9N08HTWG, Maximum Drain Source Resistance: 0.0059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 1.29

1

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z, Maximum Drain Source Resistance: 0.0038 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 1

GBP 0.86

1

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z, Maximum Drain Source Resistance: 0.0038 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 1

GBP 1.09

1

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 2.45

1

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.96

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 5.16

1

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.36

1

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.095 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 2.57

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP082N65S3HF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 3.56

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL067N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL067N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 3.24

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 2.30

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 4.41

1

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.095 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 2.05

1

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 3.48

1

onsemi N-Channel MOSFET, 40 A, 650 V, 4-Pin TO-247 NTH4LN067N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 4-Pin TO-247 NTH4LN067N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 2.49

1

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3HF

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 5.71

1

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL095N65S3H

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL095N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.095 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 2.52

1

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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi N-Channel MOSFET Transistor, 84 A, 80 V, 8-Pin PQFN8 NTTFS5D9N08HTWG

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z

onsemi P-Channel MOSFET Transistor, 96 A, 30 V Depletion, 8-Pin PQFN8 NTTFS008P03P8Z

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF

onsemi N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN NTMT090N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL067N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTP095N65S3H

onsemi N-Channel MOSFET, 49 A, 650 V, 8-Pin H-PSOF8L NTBL050N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 4-Pin TO-247 NTH4LN067N65S3H

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3HF

onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL095N65S3H