onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 FDP2D3N10C
onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 FDP2D3N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 214 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V