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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.36

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.50

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.33

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.21

1

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Operating Temperature: +200 °C

GBP 13.73

1

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Operating Temperature: +200 °C

GBP 10.65

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 9.03

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 9.03

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 543 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 12.82

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 543 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21mm, Length: 15.95mm

GBP 14.55

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 543 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21mm, Length: 15.95mm

GBP 13.82

1

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: -2 V, Maximum Operating Temperature: +200 °C

GBP 9.68

1

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: -2 V, Maximum Operating Temperature: +200 °C

GBP 12.57

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.22

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.38

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101

GBP 10.04

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.85

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.83

1

onsemi N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247 NTHL033N65S3HF

onsemi N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247 NTHL033N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.09

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.39

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.15

1

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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F

onsemi N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247 NTHL033N65S3HF

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS