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onsemi 650V 37A, Schottky Diode, 3-Pin TO-247 FFSH3065B-F085

onsemi 650V 37A, Schottky Diode, 3-Pin TO-247 FFSH3065B-F085, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.1kA

GBP 9.69

1

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.125kA

GBP 11.19

1

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.4kA

GBP 8.90

1

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.125kA

GBP 11.19

1

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.125kA

GBP 12.17

1

onsemi 650V 48A, SiC Schottky Diode, 2-Pin TO-247 FFSH4065A

onsemi 650V 48A, SiC Schottky Diode, 2-Pin TO-247 FFSH4065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.3kA

GBP 9.84

1

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.4kA

GBP 13.54

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.21

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.33

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.4V, Number of Elements per Chip: 1, Diode Technology: SiC Schottky

GBP 9.13

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.50

1

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.4V, Number of Elements per Chip: 1, Diode Technology: SiC Schottky

GBP 10.10

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.36

1

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A, Mounting Type: Through Hole, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.4V, Height: 16.51mm, Length: 10.67mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, Width: 4.8mm

GBP 11.85

1

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A, Mounting Type: Through Hole, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.4V, Height: 16.51mm, Length: 10.67mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, Width: 4.8mm

GBP 10.21

1

onsemi MC100EP131MNG Quad D Type Flip Flop IC, ECL, 32-Pin QFN

onsemi MC100EP131MNG Quad D Type Flip Flop IC, ECL, 32-Pin QFN, Output Signal Type: Differential, Triggering Type: Negative Edge, Positive Edge, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Set/Reset: Yes, Number of Elements per Chip: 4, Maximum Propagation Delay Time @ Maximum CL: 700ps, Dimensions: 5 x 5 x 0.95mm

GBP 9.00

1

onsemi MC10EP56DTG Multiplexer, Quad, Multiplexer, 1-of-2, 20-Pin TSSOP

onsemi MC10EP56DTG Multiplexer, Quad, Multiplexer, 1-of-2, 20-Pin TSSOP, Logic Family: ECL, Number of Elements per Chip: 4, Mounting Type: Surface Mount, Dimensions: 6.6 x 4.5 x 1.05mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 3 V, Minimum Operating Temperature: -40 °C

GBP 9.04

1

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Operating Temperature: +200 °C

GBP 10.65

1

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Operating Temperature: +200 °C

GBP 13.73

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 543 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21mm, Length: 15.95mm

GBP 13.82

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 9.03

1

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onsemi 650V 37A, Schottky Diode, 3-Pin TO-247 FFSH3065B-F085

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 30A, SiC Schottky Diode, 2-Pin TO-247 FFSH3065A

onsemi 650V 48A, SiC Schottky Diode, 2-Pin TO-247 FFSH4065A

onsemi 650V 60A, SiC Schottky Diode, 2-Pin TO-247 FFSH5065A

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi 650V 50A, Schottky Diode, 2-Pin TO-247 FFSH5065B-F085OS

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi MC100EP131MNG Quad D Type Flip Flop IC, ECL, 32-Pin QFN

onsemi MC10EP56DTG Multiplexer, Quad, Multiplexer, 1-of-2, 20-Pin TSSOP

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH76N60N

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF