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Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.35

1

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.61

1

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.50

1

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 760 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.56

1

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.28

1

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.27

1

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.40

1

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 760 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.01

1

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.28

1

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.36

1

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.27

1

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.47

1

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.81

1

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 760 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.19

1

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.05

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.77

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix N-Channel MOSFET, 14.4 A, 250 V, 8-Pin SO-8 Si7190ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 14.4 A, 250 V, 8-Pin SO-8 Si7190ADP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 56.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.57

1

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 3.6V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.42

1

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin SO-8 SiDR392DP-T1-GE3

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin SO-8 SiDR392DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, +6 V, Forward Diode Voltage: 1.1V

GBP 0.78

1

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.11

1

Vishay Siliconix N-Channel MOSFET, 12.3 A, 250 V, 8-Pin SO-8 Si7434ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 12.3 A, 250 V, 8-Pin SO-8 Si7434ADP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 54.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.66

1

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 3.6V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.53

1

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 3.6V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.52

1

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Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 24.5 A, 150 V, 8-Pin SO-8 SQJ872EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 30 A, 40 V, 8-Pin SO-8 SQJ415EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 14.4 A, 250 V, 8-Pin SO-8 Si7190ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin SO-8 SiDR392DP-T1-GE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 12.3 A, 250 V, 8-Pin SO-8 Si7434ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 45 A, 100 V, 8-Pin SO-8 SiR108DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3