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Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A

Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A, Length: 10.8mm, Height: 4.2mm, Dimensions: 10.8 x 10.8 x 4.2mm, Shielded: Yes, Maximum DC Resistance: 3.07mΩ, Maximum Self Resonant Frequency: 1MHz, Maximum Operating Temperature: +155°C, Minimum Operating Temperature: -55°C, MPN: IHLE4040DCER1R0M5A

GBP 1.12

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3, Package Type: TO-251, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 1.13

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3, Package Type: TO-251, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 0.54

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 0.61

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.81

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.99

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.29

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.18

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 3.55

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.78

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.63

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.23

1

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.86

1

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 0.82

1

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 1.30

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.02

1

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C, MPN: 25F10

GBP 3.19

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay SMD-6 SSR 1 FORM A -e3

Vishay SMD-6 SSR 1 FORM A -e3, MPN: LH1510AAB

GBP 2.33

1

Vishay DIP-6 SSR 1 FORM A -e3

Vishay DIP-6 SSR 1 FORM A -e3, MPN: LH1510AT

GBP 1.66

1

Vishay DIP-6 SSR 1 FORM A -e3

Vishay DIP-6 SSR 1 FORM A -e3, MPN: LH1510AT

GBP 1.82

1

Vishay SMD-6 SSR 1 FORM A -e3

Vishay SMD-6 SSR 1 FORM A -e3, MPN: LH1510AAB

GBP 2.29

1

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Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay SMD-6 SSR 1 FORM A -e3

Vishay DIP-6 SSR 1 FORM A -e3

Vishay DIP-6 SSR 1 FORM A -e3

Vishay SMD-6 SSR 1 FORM A -e3