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Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.29

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.99

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.81

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 0.61

1

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP, MPN: TLUV5300

GBP 0.28

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 3.85

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 4.09

1

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3, Maximum Drain Source Resistance: 0.0009 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Number of Elements per Chip: 2

GBP 2.17

1

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3, Maximum Drain Source Resistance: 0.0009 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Number of Elements per Chip: 2

GBP 1.12

1

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.2 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 9.01mm, Length: 10.41mm

GBP 1.46

1

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 4.37

1

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 37 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.12mm, Length: 10.63mm

GBP 2.11

1

Vishay N-Channel MOSFET, 38 A, 250 V, 3-Pin TO-247AC IRFP264PBF

Vishay N-Channel MOSFET, 38 A, 250 V, 3-Pin TO-247AC IRFP264PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 3.40

1

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 2.57

1

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 3.28

1

Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF

Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 4.00

1

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 2.81

1

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 2.60

1

Vishay N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC IRFP22N50APBF

Vishay N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC IRFP22N50APBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 277 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm

GBP 4.01

1

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 37 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.12mm, Length: 10.63mm

GBP 1.99

1

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 2.67

1

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Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3

Vishay Dual N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK 8 x 8L SQJQ144AE-T1_GE3

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF

Vishay N-Channel MOSFET, 38 A, 250 V, 3-Pin TO-247AC IRFP264PBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360LCPBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF

Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

Vishay N-Channel MOSFET, 23 A, 400 V, 3-Pin TO-247AC IRFP360PBF

Vishay N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC IRFP22N50APBF

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF