Promydea.it | Web Agency Sicilia

Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A

Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A, Length: 10.8mm, Height: 4.2mm, Dimensions: 10.8 x 10.8 x 4.2mm, Shielded: Yes, Maximum DC Resistance: 3.07mΩ, Maximum Self Resonant Frequency: 1MHz, Maximum Operating Temperature: +155°C, Minimum Operating Temperature: -55°C, MPN: IHLE4040DCER1R0M5A

GBP 1.12

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3, Package Type: TO-251, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 1.13

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3, Package Type: TO-251, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 0.54

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.99

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.81

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.29

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 0.61

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.18

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 3.55

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.78

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.63

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 1.30

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.02

1

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.86

1

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.23

1

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 0.82

1

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C, MPN: 25F10

GBP 3.19

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 W, 48 W, 60 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3

GBP 1.09

1

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 W, 48 W, 60 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3

GBP 1.11

1

Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 42.5 mΩ, 62 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 3 W, 3.1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.32

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 140 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.78 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.50

1

Realizziamo gli obiettivi di business dei nostri clienti: dicci cosa ti serve, lo realizzeremo per te.

Brand

Gender

Merchant

Price (EUR)

Vishay, IHLE, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 1 μH 23.5 (Heat) A, 24 (Saturation) A

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay ER - DIODE; 25A IF; 100V; 1.5K/W; 356 A @ 50 HZ, 373 A @ 60 HZ IFMS; 12MA IR; -65C

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3