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Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm

GBP 0.81

1

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm

GBP 0.71

1

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm

GBP 0.71

1

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 9.8mm, Maximum Operating Temperature: +150 °C

GBP 2.11

1

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 9.8mm, Maximum Operating Temperature: +150 °C

GBP 1.76

1

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 9.8mm, Maximum Operating Temperature: +150 °C

GBP 2.39

1

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.61

1

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC SI4134DY-T1-GE3

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC SI4134DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.27

1

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.61

1

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.85mm, Length: 3.08mm

GBP 0.45

1

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.85mm, Length: 3.08mm

GBP 0.45

1

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.85mm, Length: 3.08mm

GBP 0.18

1

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Zener Type: General Purpose, Test Current: 9.5mA, Maximum Zener Impedance: 13Ω, Maximum Reverse Leakage Current: 500 nA @ 9.9 V, Length: 3.9mm, Diameter: 1.7mm, Dimensions: 1.7 (Dia.) x 3.9mm, MPN: 1N5243B-TAP

GBP 0.01

1

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Zener Type: General Purpose, Test Current: 9.5mA, Maximum Zener Impedance: 13Ω, Maximum Reverse Leakage Current: 500 nA @ 9.9 V, Dimensions: 1.7 (Dia.) x 3.9mm, Forward Current: 200mA, Forward Voltage: 1.1V, MPN: 1N5243B-TAP

GBP 0.01

1

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Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC SI4134DY-T1-GE3

Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35

Vishay, 13V Zener Diode ±5% 500 mW Through Hole 2-Pin DO-35