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Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.87

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm, Length: 6.73mm

GBP 0.76

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.70

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 6.22mm, Length: 6.73mm

GBP 0.48

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm, Length: 6.73mm

GBP 0.76

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 6.22mm, Length: 6.73mm

GBP 0.52

1

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm, Length: 15.87mm

GBP 4.25

1

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm, Length: 15.87mm

GBP 4.25

1

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm, Length: 15.87mm

GBP 3.74

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.46

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.98

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.98

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 0.268mm, Length: 1mm

GBP 0.34

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 0.268mm, Length: 1mm

GBP 0.34

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 0.268mm, Length: 1mm

GBP 0.16

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm, Length: 3.04mm

GBP 0.44

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm, Length: 3.04mm

GBP 0.27

1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm, Length: 3.04mm

GBP 0.22

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 140 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.78 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.30

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 140 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.78 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.37

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 140 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.78 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.50

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 170 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 6.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm, Length: 2.15mm

GBP 0.36

1

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, 170 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 6.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm, Length: 2.15mm

GBP 0.49

1

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Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) SIA517DJ-T1-GE3