Promydea.it | Web Agency Sicilia

Vishay, Through Hole Ceramic Capacitor Kit 10 per Value pieces

Vishay, Through Hole Ceramic Capacitor Kit 10 per Value pieces, Kit Includes: 7 Capacitance Values, MPN: AY21KITHF

GBP 27.60

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 0.61

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.81

1

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.95 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 0.99

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.29

1

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP, MPN: TLUV5300

GBP 0.28

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 6.11

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 4.09

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 3.85

1

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3, Maximum Drain Source Resistance: 0.052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 5.92

1

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060, Mounting Type: Surface Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 740mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 25.5kA

GBP 41.17

1

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060, Mounting Type: Surface Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 740mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 25.5kA

GBP 43.22

1

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150, Mounting Type: Surface Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.33V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 20kA

GBP 74.18

1

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150, Mounting Type: Surface Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.33V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 20kA

GBP 70.35

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 73.34

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 75.77

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 77.32

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 160.17

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 154.66

1

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.96V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 260ns

GBP 112.57

1

Vishay 1600V 165A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKD166/16PBF

Vishay 1600V 165A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKD166/16PBF, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.43V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 5kA

GBP 62.50

1

Realizziamo gli obiettivi di business dei nostri clienti: dicci cosa ti serve, lo realizzeremo per te.

Brand

Colour

Gender

Merchant

Price (EUR)

Vishay, Through Hole Ceramic Capacitor Kit 10 per Value pieces

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-220AB SIHP052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247AC SIHG052N60EF-GE3

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060

Vishay 60V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS408/060

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150

Vishay 150V 400A, Dual Schottky Diode, 3-Pin ADD-A-PAK VS-VSKCS409/150

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKDU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 600V 435A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKCU300/06PBF

Vishay 1600V 165A, Dual Silicon Junction Diode, 3-Pin INT-A-PAK VS-VSKD166/16PBF