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Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F)

Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F), Mounting Type: Surface Mount, Diode Configuration: Isolated, Number of Elements per Chip: 2

GBP 0.15

1

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 600mV, Number of Elements per Chip: 1

GBP 0.15

1

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 600mV, Number of Elements per Chip: 1

GBP 0.09

1

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 600mV, Number of Elements per Chip: 1

GBP 0.11

1

Toshiba 45V 300mA, Schottky Diode, 2-Pin USC CUS357,H3F(T

Toshiba 45V 300mA, Schottky Diode, 2-Pin USC CUS357,H3F(T, Mounting Type: Surface Mount, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1A

GBP 0.05

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.83

1

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S, Maximum Drain Source Resistance: 5.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Number of Elements per Chip: 1

GBP 0.34

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 3.07

1

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S, Maximum Drain Source Resistance: 5.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Number of Elements per Chip: 1

GBP 0.41

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.58

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.76

1

Toshiba Diode, 2-Pin SOT-323 DF3A5.6LFU(TE85L,F

Toshiba Diode, 2-Pin SOT-323 DF3A5.6LFU(TE85L,F, Mounting Type: Surface Mount, Package Type: SOT-323 (SC-70), Diode Configuration: Single, Maximum Forward Voltage Drop: 6V, Number of Elements per Chip: 1, Diode Technology: Silicon Junction

GBP 0.12

1

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M)

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 580mV, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 20A

GBP 0.25

1

Toshiba RN2402(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini

Toshiba RN2402(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 1, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: 0.3 V

GBP 0.06

1

Toshiba 45V 100mA, Dual Schottky Diode, 3-Pin SOT-346 1SS396(F)

Toshiba 45V 100mA, Dual Schottky Diode, 3-Pin SOT-346 1SS396(F), Mounting Type: Surface Mount, Package Type: SOT-346 (SC-59), Diode Configuration: Series, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 1A

GBP 0.12

1

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Maximum Operating Supply Voltage: 3.6 V

GBP 0.19

1

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Maximum Operating Supply Voltage: 3.6 V

GBP 0.19

1

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Maximum Operating Supply Voltage: 3.6 V

GBP 0.23

1

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Maximum Operating Supply Voltage: 3.6 V

GBP 0.13

1

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Maximum Operating Supply Voltage: 3.6 V

GBP 0.20

1

Toshiba DF3A6.8FU(F), Dual-Element ESD Protection Diode, 3-Pin USM

Toshiba DF3A6.8FU(F), Dual-Element ESD Protection Diode, 3-Pin USM, Diode Configuration: Common Anode, Mounting Type: Surface Mount, Number of Elements per Chip: 2, Dimensions: 2 x 1.25 x 0.9mm, Length: 2mm, Maximum Reverse Leakage Current: 500nA, Test Current: 5mA, Width: 1.25mm

GBP 0.13

1

Toshiba RN2403(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini

Toshiba RN2403(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 1, Dimensions: 2.9 x 1.5 x 1.1mm, Minimum DC Current Gain: 70, Maximum Collector Emitter Saturation Voltage: 0.3 V

GBP 0.06

1

Toshiba 74HC573D 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin SOIC

Toshiba 74HC573D 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin SOIC, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 13.1 x 7.5 x 2.25mm, Length: 13.1mm, Maximum Operating Supply Voltage: 6 V, Maximum Operating Temperature: +85 °C

GBP 0.25

1

Toshiba 74VHC138FT, Decoder, 16-Pin TSSOP

Toshiba 74VHC138FT, Decoder, 16-Pin TSSOP, Demultiplexing Capability: 3-of-8, Number of Elements per Chip: 34, Output Type: TTL, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 5 x 4.4 x 1mm, Length: 5mm, Maximum Operating Supply Voltage: 5.5 V, Automotive Standard: AEC-Q100

GBP 0.17

1

Toshiba 74VHC373FT 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin TSSOP

Toshiba 74VHC373FT 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin TSSOP, Number of Elements per Chip: 19, Polarity: Inverting, Mounting Type: Surface Mount, Dimensions: 6.5 x 4.4 x 1mm, Length: 6.5mm, Automotive Standard: AEC-Q100, Maximum Operating Supply Voltage: 5.5 V

GBP 0.15

1

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Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F)

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 40V 2A, Schottky Diode, 2-Pin S-FLAT CRS20I40A

Toshiba 45V 300mA, Schottky Diode, 2-Pin USC CUS357,H3F(T

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Diode, 2-Pin SOT-323 DF3A5.6LFU(TE85L,F

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M)

Toshiba RN2402(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini

Toshiba 45V 100mA, Dual Schottky Diode, 3-Pin SOT-346 1SS396(F)

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX373FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba 74LCX573FT 8bit-Bit Octal D Type Latch, Transparent D Type, CMOS, 20-Pin TSSOP

Toshiba DF3A6.8FU(F), Dual-Element ESD Protection Diode, 3-Pin USM

Toshiba RN2403(TE85L,F) PNP Digital Transistor, 50 V, 3-Pin SMini

Toshiba 74HC573D 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin SOIC

Toshiba 74VHC138FT, Decoder, 16-Pin TSSOP

Toshiba 74VHC373FT 8bit-Bit Octal D Type Latch, Transparent D Type, 20-Pin TSSOP