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Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J35FS(TE85L,F)

Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J35FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.6mm

GBP 0.09

1

Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J16FS(TE85L,F)

Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J16FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.6mm, MPN: SSM3J16FS(F)

GBP 0.09

1

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3K15FS(TE85L,F)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3K15FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.7mm, Length: 1.6mm, MPN: SSM3K15FS(F)

GBP 0.07

1

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3K16FS(TE85L,F)

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3K16FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.6mm, MPN: SSM3K16FS(F)

GBP 0.08

1

Toshiba P-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3J15FS(TE85L,F)

Toshiba P-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3J15FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.7V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.7mm, Length: 1.6mm, MPN: SSM3J15FS(F)

GBP 0.08

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

GBP 1.49

1

Toshiba 2SC2713-BL(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

Toshiba 2SC2713-BL(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.09

1

Toshiba 2SC2713-GR(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

Toshiba 2SC2713-GR(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.09

1

Toshiba 2SC4117-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-323

Toshiba 2SC4117-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.12

1

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-416 SSM3K15AFS,LF(T

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-416 SSM3K15AFS,LF(T, Package Type: SOT-416 (SC-75), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Height: 0.7mm, Length: 1.6mm

GBP 0.06

1

Toshiba 2SA1587-GR(TE85L,F PNP Transistor, 100 mA, 120 V, 3-Pin SOT-323

Toshiba 2SA1587-GR(TE85L,F PNP Transistor, 100 mA, 120 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -120 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.20

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.21

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.91

1

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.45

1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.99

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.15

1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.84

1

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.98

1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.89

1

Toshiba N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK TK33S10N1Z

Toshiba N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK TK33S10N1Z, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.31

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.55

1

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.63

1

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.71

1

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.18

1

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.48

1

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Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J35FS(TE85L,F)

Toshiba P-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3J16FS(TE85L,F)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3K15FS(TE85L,F)

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin SSM SSM3K16FS(TE85L,F)

Toshiba P-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM SSM3J15FS(TE85L,F)

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba 2SC2713-BL(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

Toshiba 2SC2713-GR(F) NPN Transistor, 100 mA, 120 V, 3-Pin SOT-346

Toshiba 2SC4117-GR(TE85L,F NPN Transistor, 100 mA, 120 V, 3-Pin SOT-323

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-416 SSM3K15AFS,LF(T

Toshiba 2SA1587-GR(TE85L,F PNP Transistor, 100 mA, 120 V, 3-Pin SOT-323

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

Toshiba N-Channel MOSFET, 33 A, 100 V, 3-Pin DPAK TK33S10N1Z

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH

Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH