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Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.75

1

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.76

1

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.66

1

Toshiba P-Channel MOSFET, 40 A, 40 V, 8-Pin SOP TPCA8108(TE12L,Q)

Toshiba P-Channel MOSFET, 40 A, 40 V, 8-Pin SOP TPCA8108(TE12L,Q), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.95mm

GBP 0.99

1

Toshiba N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)

Toshiba N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.3mm, Length: 10mm

GBP 0.61

1

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

GBP 0.40

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

GBP 1.28

1

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.22

1

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.24

1

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.32

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.64

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.04

1

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.5mm

GBP 1.17

1

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S, Maximum Drain Source Resistance: 5.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Number of Elements per Chip: 1

GBP 0.34

1

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S, Maximum Drain Source Resistance: 5.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Number of Elements per Chip: 1

GBP 0.41

1

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.30

1

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.35

1

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.53

1

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 2.32

1

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.46

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.55

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.55

1

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.61

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.15

1

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.58

1

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Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L

Toshiba P-Channel MOSFET, 40 A, 40 V, 8-Pin SOP TPCA8108(TE12L,Q)

Toshiba N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Dual N-Channel MOSFET, 5.1 A, 40 V, 8-Pin SOP TPC8227-H,LQ(S

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba Silicon N-Channel MOSFET, 82 A, 40 V, 8-Pin SOP TPH3R704PC,LQ(S

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL