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Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.5mm

GBP 0.47

1

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.5mm

GBP 0.59

1

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.5mm

GBP 1.17

1

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.5mm

GBP 0.43

1

Toshiba, TLP7820(A-LF4,E(O DC Input Photocoupler, Surface Mount, 8-Pin SO

Toshiba DC Input Photocoupler, Surface Mount, 8-Pin SO, Number of Channels: 1, MPN: TLP7820(A-LF4,E(O

GBP 4.57

1

Toshiba, TLP7820(A-LF4,E(O DC Input Photocoupler, Surface Mount, 8-Pin SO

Toshiba DC Input Photocoupler, Surface Mount, 8-Pin SO, Number of Channels: 1, MPN: TLP7820(A-LF4,E(O

GBP 3.53

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.41

1

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 66 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Height: 0.7mm

GBP 0.13

1

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 66 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Height: 0.7mm

GBP 0.13

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.71

1

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 66 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Height: 0.7mm

GBP 0.15

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.75

1

Toshiba, TLP7920(A,F(O DC Input Photocoupler, Through Hole, 8-Pin SMD

Toshiba DC Input Photocoupler, Through Hole, 8-Pin SMD, Number of Channels: 1, Typical Rise Time: 1.7ns, Maximum Input Current: 10 mA, Isolation Voltage: 5000 Vrms, Series: TLP7920, MPN: TLP7920(A,F(O

GBP 4.31

1

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.46

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.49

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.14

1

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.45

1

Toshiba N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP TPH6R003NL

Toshiba N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP TPH6R003NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.54

1

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 86 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.53

1

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 2.32

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.88

1

Toshiba N-Channel MOSFET, 90 A, 30 V, 8-Pin TSON TPN2R703NL

Toshiba N-Channel MOSFET, 90 A, 30 V, 8-Pin TSON TPN2R703NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.18

1

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 4.02

1

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin SOP TPH3R704PL

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin SOP TPH3R704PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 81 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.70

1

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.27

1

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Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba P-Channel MOSFET, 12 A, 40 V, 8-Pin SOP TPC8124

Toshiba P-Channel MOSFET, 16 A, 30 V, 8-Pin SOP TPC8128

Toshiba, TLP7820(A-LF4,E(O DC Input Photocoupler, Surface Mount, 8-Pin SO

Toshiba, TLP7820(A-LF4,E(O DC Input Photocoupler, Surface Mount, 8-Pin SO

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba, TLP7920(A,F(O DC Input Photocoupler, Through Hole, 8-Pin SMD

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH

Toshiba N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP TPH6R003NL

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 90 A, 30 V, 8-Pin TSON TPN2R703NL

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin SOP TPH3R704PL

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH