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Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.60

1

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.69

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.23

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.23

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 38.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 0.97

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 38.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 0.97

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 38.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 0.77

1

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.78

1

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.61

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.34

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.35

1

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.61

1

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.13V

GBP 0.52

1

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.81

1

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.39

1

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.39

1

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.49

1

Taiwan Semiconductor Taiwan Semi TLD6S10AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S10AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 17V, Minimum Breakdown Voltage: 11.1V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 1.71

1

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 27.6V, Minimum Breakdown Voltage: 18.9V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 2.60

1

Taiwan Semiconductor Taiwan Semi TLD8S15AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S15AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 24.4V, Minimum Breakdown Voltage: 16.7V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 2.92

1

Taiwan Semiconductor Taiwan Semi TLD6S26AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S26AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 42.1V, Minimum Breakdown Voltage: 28.9V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 1.71

1

Taiwan Semiconductor Taiwan Semi TLD8S18AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S18AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 29.2V, Minimum Breakdown Voltage: 20V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 2.92

1

Taiwan Semiconductor Taiwan Semi TLD8S11AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S11AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 18.2V, Minimum Breakdown Voltage: 12.2V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 2.92

1

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 27.6V, Minimum Breakdown Voltage: 18.9V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 1.79

1

Taiwan Semiconductor Taiwan Semi TLD8S17AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S17AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB, Maximum Clamping Voltage: 27.6V, Minimum Breakdown Voltage: 18.9V, Mounting Type: Surface Mount, Number of Elements per Chip: 3

GBP 1.99

1

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Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3-Pin ITO-220 Taiwan Semi TSM70N600CI C0G

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi TSM4NB60CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 4.5 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N900CP ROG

Taiwan Semiconductor N-Channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N600CP ROG

Taiwan Semiconductor Taiwan Semi TLD6S10AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S15AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S26AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S18AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S11AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD6S17AH, Triple-Element Uni-Directional TVS Diode, 4600W, 2-Pin DO-218AB

Taiwan Semiconductor Taiwan Semi TLD8S17AH, Triple-Element Uni-Directional TVS Diode, 6600W, 2-Pin DO-218AB