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STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 0.16

1

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC, Amplifier Type: High Speed, Precision, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm

GBP 0.90

1

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC, Amplifier Type: High Speed, Precision, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm

GBP 0.43

1

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC, Amplifier Type: High Speed, Precision, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm

GBP 0.96

1

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm, Rail to Rail: Rail to Rail Input/Output

GBP 0.79

1

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm, Rail to Rail: Rail to Rail Input/Output

GBP 0.65

1

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Slew Rate: 4.5V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.25mm, Rail to Rail: Rail to Rail Input/Output

GBP 0.39

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 1.3mm, Length: 3.04mm

GBP 0.72

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 1.3mm, Length: 3.04mm

GBP 0.34

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 1.3mm, Length: 3.04mm

GBP 0.54

1

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN, Amplifier Type: General Purpose, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Swing, Typical Slew Rate: 0.6V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.52

1

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN, Amplifier Type: General Purpose, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Swing, Typical Slew Rate: 0.6V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 1.07

1

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN, Amplifier Type: General Purpose, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Swing, Typical Slew Rate: 0.6V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.73

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.4mm

GBP 0.83

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.4mm

GBP 0.62

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.4mm

GBP 0.39

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.79

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.56

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 4.58

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 4.87

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.58

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.55

1

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STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912AIDT, Op Amp, RRIO, 8MHz 100 kHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics TSV912IDT, High Speed, Op Amp, RRIO, 8MHz, 2.3 → 5.5 V, 8-Pin SOIC

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics TSV854IQ4T, Op Amp, RRO, 1.3MHz 10 kHz, 2.3 → 5.5 V, 16-Pin QFN

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin DPAK STD3NK50ZT4

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2