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STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.23

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.18

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.83

1

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6, Maximum Drain Source Resistance: 0.06 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.95

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 6.83

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.64

1

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6, Maximum Drain Source Resistance: 0.06 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 6.91

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1, Series: STO67N60DM6

GBP 6.40

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.68

1

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 54 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STO67N60M6

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STP50N60DM6

GBP 4.88

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 7.60

1

STMicroelectronics 16kbit 150ns NVRAM, 24-Pin PCDIP, M48Z02-150PC1

STMicroelectronics 16kbit 150ns NVRAM, 24-Pin PCDIP, Organisation: 2K x 8, Mounting Type: Through Hole, Dimensions: 34.8 x 18.34 x 9.89mm, Length: 34.8mm, Width: 18.34mm, Height: 8.89mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +70 °C, Minimum Operating Supply Voltage: 4.75 V, Number of Bits per Word: 8bit, MPN: M48Z02-150PC1

GBP 8.17

1

STMicroelectronics 16kbit 150ns SRAM, 24-Pin PCDIP, M48Z02-150PC1

STMicroelectronics 16kbit 150ns SRAM, 24-Pin PCDIP, Organisation: 2K x 8, Number of Bits per Word: 8bit, Low Power: Yes, Mounting Type: Through Hole, Dimensions: 34.8 x 18.34 x 9.89mm, Height: 8.89mm, Length: 34.8mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +70 °C, Minimum Operating Supply Voltage: 4.75 V, MPN: M48Z02-150PC1

GBP 8.59

1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.53

1

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 79 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 6.67

1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.33

1

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 79 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 6.66

1

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.34

1

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.32

1

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.04

1

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 79 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.74

1

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 6.05

1

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STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics 16kbit 150ns NVRAM, 24-Pin PCDIP, M48Z02-150PC1

STMicroelectronics 16kbit 150ns SRAM, 24-Pin PCDIP, M48Z02-150PC1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2