STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6
STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm