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STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1

GBP 3.39

1

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.13

1

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6, Maximum Drain Source Resistance: 54 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 3.44

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.75

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.55

1

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Operating Frequency: 3 MHz, Number of Elements per Chip: 1, Dimensions: 10.8 x 7.8 x 2.7mm, Height: 10.8mm

GBP 0.58

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.36

1

STMicroelectronics Dual N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK-3 STD9N60M6

STMicroelectronics Dual N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK-3 STD9N60M6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 2

GBP 0.57

1

STMicroelectronics BD438 PNP Bipolar Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics BD438 PNP Bipolar Transistor, 4 A, 45 V, 3-Pin SOT-32, Mounting Type: Surface Mount, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Operating Frequency: 3 MHz, Number of Elements per Chip: 1, Dimensions: 10.8 x 7.8 x 2.7mm

GBP 0.47

1

STMicroelectronics BD437 NPN Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics BD437 NPN Transistor, 4 A, 45 V, 3-Pin SOT-32, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Dimensions: 10.8 x 7.8 x 2.7mm, Maximum Collector Emitter Saturation Voltage: 0.6 V, Maximum Operating Temperature: +150 °C

GBP 0.55

1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 1.67

1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 1.96

1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 0.97

1

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 850 V, Maximum Emitter Base Voltage: 9 V, Number of Elements per Chip: 1, Dimensions: 9.15 x 10.4 x 4.6mm, Height: 9.15mm, Length: 10.4mm

GBP 0.36

1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.6V

GBP 4.30

1

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Height: 0.95mm, Length: 5.4mm

GBP 0.85

1

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 10.4 x 4.6 x 15.75mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.86

1

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Height: 0.95mm, Length: 5.4mm

GBP 1.14

1

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 10.4 x 4.6 x 15.75mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.64

1

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Height: 0.95mm, Length: 5.4mm

GBP 0.54

1

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Number of Elements per Chip: 4, Maximum Collector Emitter Saturation Voltage: 1.4 V, Dimensions: 20 x 7.1 x 5.1mm, Length: 20mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -20 °C

GBP 3.51

1

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Number of Elements per Chip: 4, Maximum Collector Emitter Saturation Voltage: 1.4 V, Dimensions: 20 x 7.1 x 5.1mm, Length: 20mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -20 °C

GBP 3.31

1

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Number of Elements per Chip: 4, Maximum Collector Emitter Saturation Voltage: 1.4 V, Dimensions: 20 x 7.1 x 5.1mm, Length: 20mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -20 °C

GBP 2.82

1

STMicroelectronics N-Channel MOSFET, 6 A, 20 V, 6-Pin PowerFLAT STL6N2VH5

STMicroelectronics N-Channel MOSFET, 6 A, 20 V, 6-Pin PowerFLAT STL6N2VH5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 2.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 0.75mm, Length: 2.1mm

GBP 0.09

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 0.16

1

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STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics Dual N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK-3 STD9N60M6

STMicroelectronics BD438 PNP Bipolar Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics BD437 NPN Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics TIP42A PNP Transistor, 6 A, 60 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT STL90N6F7

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP

STMicroelectronics N-Channel MOSFET, 6 A, 20 V, 6-Pin PowerFLAT STL6N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STP3NK50Z