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STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.24 O, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 16.74

1

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.24 O, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 20.14

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1, Series: STO67N60DM6

GBP 6.40

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1

GBP 3.39

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V, Maximum Drain Source Resistance: 0.045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 13.18

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 6.83

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.64

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V, Maximum Drain Source Resistance: 0.045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 11.61

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 10.05

1

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STP50N60DM6

GBP 4.88

1

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 54 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STO67N60M6

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6, Maximum Drain Source Resistance: 54 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 3.44

1

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG, Maximum Drain Source Resistance: 0.055 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 14.15

1

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG, Maximum Drain Source Resistance: 0.055 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 16.03

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.75

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.55

1

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Operating Frequency: 3 MHz, Number of Elements per Chip: 1, Dimensions: 10.8 x 7.8 x 2.7mm, Height: 10.8mm

GBP 0.58

1

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V, Maximum Drain Source Resistance: 0.072 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 11.61

1

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V, Maximum Drain Source Resistance: 0.072 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 13.18

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.83

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.36

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.18

1

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STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV STO67N60M6

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics BD438 PNP Transistor, 4 A, 45 V, 3-Pin SOT-32

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6