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ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

GBP 0.43

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package, Radiant Flux: 7mW

GBP 0.44

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package, Radiant Flux: 7mW

GBP 0.29

ROHM N-Channel MOSFET, 60 A, 40 V, 2 + Tab-Pin DPAK RD3G600GNTL

ROHM N-Channel MOSFET, 60 A, 40 V, 2 + Tab-Pin DPAK RD3G600GNTL, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.03

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ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

ROHM SIM-20ST, 950nm IR Emitting Diode, 4.4 x 4.3 mm Through Hole package

ROHM N-Channel MOSFET, 60 A, 40 V, 2 + Tab-Pin DPAK RD3G600GNTL