ROHM Dual N/P-Channel MOSFET, 15 (P Channel) A, 18 (N Channel) A, 30 V, 8-Pin HSOP HP8MA2TB1
ROHM Dual N/P-Channel MOSFET, 15 (P Channel) A, 18 (N Channel) A, 30 V, 8-Pin HSOP HP8MA2TB1, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 7 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Height: 1.1mm, Length: 5mm