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Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP

Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP

Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP, Mounting Type: Surface Mount, Maximum Power Dissipation: 700 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 185 MHz, Number of Elements per Chip: 2, Dimensions: 1 x 3.1 x 1.7mm, Maximum Base Emitter Saturation Voltage: 1.1 V, Maximum Collector Emitter Saturation Voltage: 0.33 V

GBP 0.11
1

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 2, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 80 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Maximum Collector Cut-off Current: 50nA, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.15
1

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89

Nexperia BST51 Dual NPN Darlington Transistor, 1 A 60 V HFE:1000, 3-Pin SOT-89, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 2, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 80 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Maximum Collector Cut-off Current: 50nA, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.15
1

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89, Maximum Emitter Base Voltage: -5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 2, Maximum Base Emitter Saturation Voltage: -1.9 V, Maximum Collector Base Voltage: -60 V, Maximum Collector Emitter Saturation Voltage: -1.3 V, Maximum Collector Cut-off Current: -50nA, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.37
1

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89, Maximum Emitter Base Voltage: -5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 2, Maximum Base Emitter Saturation Voltage: -1.9 V, Maximum Collector Base Voltage: -60 V, Maximum Collector Emitter Saturation Voltage: -1.3 V, Maximum Collector Cut-off Current: -50nA, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.35
1

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89

Nexperia BST60 Dual PNP Darlington Transistor, -1 A 45 V HFE:1000, 3-Pin SOT-89, Maximum Emitter Base Voltage: -5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 2, Maximum Base Emitter Saturation Voltage: -1.9 V, Maximum Collector Base Voltage: -60 V, Maximum Collector Emitter Saturation Voltage: -1.3 V, Maximum Collector Cut-off Current: -50nA, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.54
1

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT, Number of Elements per Chip: 2, Maximum Continuous Collector Current: -100 mA, Typical Input Resistor: 2.2 kΩ, Base-Emitter Resistor: 47kΩ, Mounting Type: Surface Mount, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: -100 mV, Typical Resistor Ratio: 21, Automotive Standard: AEC-Q101

GBP 0.13
1

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1.1mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 60, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.15 V, Automotive Standard: AEC-Q101

GBP 0.02
1

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMH1,115 Dual NPN Resistor-equipped Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1.1mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 60, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.15 V, Automotive Standard: AEC-Q101

GBP 0.02
1

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1.1mm, Minimum Operating Temperature: -65 °C, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.1 V, Typical Resistor Ratio: 2.1, Automotive Standard: AEC-Q101

GBP 0.08
1

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT

Nexperia PUMD18,115 Dual NPN + PNP Resistor-equipped Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1.1mm, Minimum Operating Temperature: -65 °C, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.1 V, Typical Resistor Ratio: 2.1, Automotive Standard: AEC-Q101

GBP 0.03
1

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 1.7 x 1.3 x 0.6mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 100, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.1 V, Typical Resistor Ratio: 21, Automotive Standard: AEC-Q101

GBP 0.02
1

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT

Nexperia PEMH10,115 Dual NPN Digital Transistor, 50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 1.7 x 1.3 x 0.6mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 100, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: 0.1 V, Typical Resistor Ratio: 21, Automotive Standard: AEC-Q101

GBP 0.02
1

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 1.7 x 1.3 x 0.6mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 100, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: -100 mV, Typical Resistor Ratio: 21, Automotive Standard: AEC-Q101

GBP 0.13
1

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT

Nexperia PEMB10,115 Dual PNP Digital Transistor, -50 V, 6-Pin SOT, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Number of Elements per Chip: 2, Dimensions: 1.7 x 1.3 x 0.6mm, Minimum Operating Temperature: -65 °C, Minimum DC Current Gain: 100, Maximum Power Dissipation: 200 (Per Transistor) mW, 300 (Per Device) mW, Maximum Collector Emitter Saturation Voltage: -100 mV, Typical Resistor Ratio: 21, Automotive Standard: AEC-Q101

GBP 0.05
1