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Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 1.69

1

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 0.86

1

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 55 mO, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.07

1

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 55 mO, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.70

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.36

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.67

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.79

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.00

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.033 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 83.13

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.033 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 74.64

1

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 7.2 mO, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1

GBP 0.51

1

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 7.2 mO, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1

GBP 0.19

1

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2, Package Type: I2PAK (TO-262), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0092 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: OptiMOS™-T2

GBP 1.24

1

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2, Package Type: I2PAK (TO-262), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0092 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: OptiMOS™-T2

GBP 1.31

1

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2, Package Type: D2PAK (TO-263), Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 6.11

1

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2, Package Type: D2PAK (TO-263), Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 7.44

1

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 2, Series: HEXFET, MPN: AUIRF7341QTR

GBP 0.82

1

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 2, Series: HEXFET, MPN: AUIRF7341QTR

GBP 0.71

1

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1, Series: HEXFET

GBP 1.18

1

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1, Series: HEXFET

GBP 0.97

1

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.009 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: OptiMOS, MPN: IPD50N06S409ATMA2

GBP 0.40

1

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.009 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: OptiMOS, MPN: IPD50N06S409ATMA2

GBP 0.35

1

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0064 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Number of Elements per Chip: 1

GBP 0.60

1

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.0V, Number of Elements per Chip: 1

GBP 0.60

1

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.0V, Number of Elements per Chip: 1

GBP 0.81

1

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Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2

Infineon N-Channel MOSFET, 45 A, 60 V I2PAK IPI45N06S409AKSA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2