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Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

GBP 82.05

1

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

GBP 44.35

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

GBP 55.71

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

GBP 55.17

1

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 48.38

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 60.18

1

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 44.35

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 82.99

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 53.49

1

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 47.52

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 54.51

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 60.77

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

GBP 76.21

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.033 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 74.64

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.033 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 83.13

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

GBP 68.31

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 66.84

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 74.51

1

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 555 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 51.01

1

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 790 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 52.11

1

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 790 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 55.31

1

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 555 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 52.03

1

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 1MHz, Dimensions: 55.9 x 39.6 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 45.66

1

Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 395 W, Dimensions: 94 x 34 x 30.2mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 47.04

1

Infineon FF200R12KT4HOSA1 Series IGBT Module, 320 A 1200 V, 3-Pin 62MM Module, Panel Mount

Infineon FF200R12KT4HOSA1 Series IGBT Module, 320 A 1200 V, 3-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1100 W, Dimensions: 106.4 x 61.4 x 30.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 87.57

1

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Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount

Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount

Infineon FF100R12RT4HOSA1 Series IGBT Module, 100 A 1200 V AG-34MM-1, Panel Mount

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount

Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

Infineon FF200R12KT4HOSA1 Series IGBT Module, 320 A 1200 V, 3-Pin 62MM Module, Panel Mount