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Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

GBP 4.79

1

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 250 W

GBP 7.30

1

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 250 W

GBP 5.23

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.97

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.05

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.13mm, Height: 20.7mm, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C

GBP 5.05

1

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 4.40

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 4.74

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 5.59

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 5.42

1

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 4.40

1

Infineon TDA21472AUMA1, 70 A, 4.25 → 16V, PQFN

GBP 4.69

1

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN, Fall Time: 50ns

GBP 4.52

1

Infineon 1ED3890MC12MXUMA1, 9 A, 6.5V 16-Pin, PG-DSO-16

GBP 4.62

1

Infineon 1ED3860MC12MXUMA1, 6 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3860MC12MXUMA1, 6 A, 6.5V 16-Pin, PG-DSO-16, Fall Time: 30ns

GBP 4.58

1

Infineon 1ED3830MC12MXUMA1, 3 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3830MC12MXUMA1, 3 A, 6.5V 16-Pin, PG-DSO-16, Fall Time: 30ns

GBP 4.44

1

Infineon 1ED3890MC12MXUMA1, 9 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3890MC12MXUMA1, 9 A, 6.5V 16-Pin, PG-DSO-16, Fall Time: 30ns

GBP 5.04

1

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

GBP 5.07

1

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

GBP 6.46

1

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 W

GBP 6.08

1

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 W

GBP 7.05

1

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP, Logic Type: CMOS, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount, Dimensions: 8.2 x 5.3 x 1.75mm

GBP 5.14

1

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP, Logic Type: CMOS, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount, Dimensions: 8.2 x 5.3 x 1.75mm

GBP 5.93

1

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223, Maximum Drain Source Resistance: 11.5 mO, Maximum Gate Threshold Voltage: 4V

GBP 4.71

1

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223, Maximum Drain Source Resistance: 11.5 mO, Maximum Gate Threshold Voltage: 4V

GBP 5.53

1

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Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon TDA21472AUMA1, 70 A, 4.25 → 16V, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon 1ED3890MC12MXUMA1, 9 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3860MC12MXUMA1, 6 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3830MC12MXUMA1, 3 A, 6.5V 16-Pin, PG-DSO-16

Infineon 1ED3890MC12MXUMA1, 9 A, 6.5V 16-Pin, PG-DSO-16

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP

Infineon IR2214SSPBF, MOSFET 2, 3 A, 20V 24-Pin, SSOP

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223