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Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

GBP 43.56

1

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

GBP 26.89

1

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

GBP 35.43

1

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

GBP 38.76

1

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

GBP 31.12

1

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 38.65

1

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 29.34

1

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 25.85

1

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 35.74

1

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 26.76

1

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 39.45

1

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 43.01

1

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 42.29

1

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 33.95

1

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

GBP 24.79

1

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 215 W

GBP 27.04

1

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 215 W

GBP 27.04

1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

GBP 19.14

1

Infineon N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R010S7AXTMA1

Infineon N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R010S7AXTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.01 Ω, Maximum Gate Threshold Voltage: 4.5V

GBP 19.13

1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.017 Ω, Maximum Gate Threshold Voltage: 4V, Series: 600V CoolMOS™ C7

GBP 18.38

1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.017 Ω, Maximum Gate Threshold Voltage: 4V, Series: 600V CoolMOS™ C7

GBP 20.88

1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 20.50

1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 20.92

1

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 1MHz, Dimensions: 55.9 x 39.6 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 42.62

1

Infineon F3L75R07W2E3B11BOMA1 Series IGBT Module, 95 A 650 V, 27-Pin EASY2B, PCB Mount

Infineon F3L75R07W2E3B11BOMA1 Series IGBT Module, 95 A 650 V, 27-Pin EASY2B, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 1MHz, Dimensions: 56.7 x 48 x 12mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: F3L75R07W2E3_B11

GBP 39.33

1

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Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B

Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

Infineon F3L25R12W1T4B27BOMA1 Series IGBT Module, 45 A 1200 V, 13-Pin EASY1B

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

Infineon N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R010S7AXTMA1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

Infineon N-Channel MOSFET, 109 A, 600 V, 3-Pin PG-TO 247 IPW60R017C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount

Infineon F3L75R07W2E3B11BOMA1 Series IGBT Module, 95 A 650 V, 27-Pin EASY2B, PCB Mount