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Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.79

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Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.00

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Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

GBP 124.24

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Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B

GBP 123.07

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Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.15V

GBP 135.54

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Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.15V

GBP 99.39

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Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B

Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 134.26

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Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B

Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 133.91

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Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 89.51

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Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD

GBP 156.34

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Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.4V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 89.28

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Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 92.76

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Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.4V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 97.61

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Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 103.19

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Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 103.22

1

Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD

Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 168.18

1

Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD

Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 170.56

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Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO, Topology: Galvanic Isolated, Bridge Type: Half Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -25 °C, MPN: 2ED300C17-S ROHS

GBP 151.71

1

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO, Topology: Galvanic Isolated, Bridge Type: Half Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -25 °C, MPN: 2ED300C17-S ROHS

GBP 147.38

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