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Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

GBP 0.69

1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

GBP 0.88

1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1, Maximum Drain Source Resistance: 650 mO, Maximum Gate Threshold Voltage: 3.5V

GBP 0.34

1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1, Maximum Drain Source Resistance: 650 mO, Maximum Gate Threshold Voltage: 3.5V

GBP 0.97

1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.65 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS CE

GBP 0.71

1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.65 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS CE

GBP 0.75

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 73 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V, Height: 2.41mm, Length: 6.73mm

GBP 0.72

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 73 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V, Height: 2.41mm, Length: 6.73mm

GBP 0.31

1

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Forward Diode Voltage: 1.2V

GBP 0.36

1

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Forward Diode Voltage: 1.2V

GBP 0.20

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 73 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V, Height: 2.41mm, Length: 6.73mm

GBP 0.79

1

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Forward Diode Voltage: 1.2V

GBP 0.47

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 29.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 0.85V, Height: 16.15mm, Length: 10.65mm

GBP 1.00

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 29.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 0.85V, Height: 16.15mm, Length: 10.65mm

GBP 0.95

1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 29.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 0.85V, Height: 16.15mm, Length: 10.65mm

GBP 0.92

1

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 156 W, Maximum Gate Source Voltage: -16 V, +16 V, Height: 0.9mm

GBP 1.07

1

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 156 W, Maximum Gate Source Voltage: -16 V, +16 V, Height: 0.9mm

GBP 2.02

1

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 156 W, Maximum Gate Source Voltage: -16 V, +16 V, Height: 0.9mm

GBP 2.38

1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.32

1

Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1

Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.23

1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.45

1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 0.76

1

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Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead IPAN60R650CEXKSA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 IPS60R650CEAKMA1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK IPD50R380CEATMA1

Infineon N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 9.9 A, 550 V, 3-Pin TO-220 IPA50R380CEXKSA2

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 88 A, 100 V, 8-Pin PQFN IRLH5030TRPBF

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

Infineon N-Channel MOSFET, 60 A, 80 V, 3-Pin TO-220FP IPA057N08N3GXKSA1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

Infineon N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1