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Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

GBP 4.79

1

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 250 W

GBP 7.30

1

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 250 W

GBP 5.23

1

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 16.06

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.97

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.05

1

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.13mm, Height: 20.7mm, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C

GBP 5.05

1

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC, Fall Time: 150ns, Topology: Buffer, Time Delay: 350ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Maximum Operating Temperature: +125 °C

GBP 1.54

1

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC, Fall Time: 150ns, Topology: Buffer, Time Delay: 350ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Maximum Operating Temperature: +125 °C

GBP 1.51

1

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO, Fall Time: 10ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 23ns, Bridge Type: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.54

1

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC, Fall Time: 65ns, Rise Time: 130ns, Topology: High Side, Time Delay: 250ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Input Bias Current: 15µA

GBP 1.19

1

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO, Fall Time: 10ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 23ns, Bridge Type: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.55

1

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 1.43

1

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 0.97

1

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC, Fall Time: 35ns, Rise Time: 60ns, High and Low Sides Dependency: Dependent, Time Delay: 900ns, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm

GBP 1.69

1

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 0.67

1

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP, Logic Type: CMOS, Fall Time: 100ns, Rise Time: 150ns, Time Delay: 0.85µs, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, Mounting Type: Through Hole, Height: 4.94mm, Length: 10.92mm

GBP 1.22

1

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 1.75

1

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC, Fall Time: 35ns, Rise Time: 60ns, High and Low Sides Dependency: Dependent, Time Delay: 900ns, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm

GBP 2.70

1

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 15ns, Rise Time: 19ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 1.15

1

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 2.45mm

GBP 2.58

1

Infineon 1EDI60H12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60H12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 2.45mm

GBP 2.58

1

Infineon 1EDI20I12MFXUMA1, MOSFET 2, -4.1 A, 4.4 A, 17V 8-Pin, DSO

Infineon 1EDI20I12MFXUMA1, MOSFET 2, -4.1 A, 4.4 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 15ns, Rise Time: 19ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 0.63

1

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 2.45mm

GBP 1.35

1

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 15ns, Rise Time: 19ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 330ns, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 1.68

1

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Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4063D-E IGBT, 96 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP

Infineon 1EDI60N12AFXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI60H12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI20I12MFXUMA1, MOSFET 2, -4.1 A, 4.4 A, 17V 8-Pin, DSO

Infineon 1EDI60I12AHXUMA1, MOSFET 2, -9.4 A, 10 A, 17V 8-Pin, DSO

Infineon 1EDI30I12MFXUMA1, MOSFET 2, -6.2 A, 5.9 A, 17V 8-Pin, DSO