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IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.29

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.46

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.58

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.74

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.77

1

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.83

1

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 3.01

1

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.95

1

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.82

1

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 3.16

1

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.95

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.76

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.96

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.66

1

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 2.91

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.49

1

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 3.11

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.91

1

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 3.11

1

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IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-247 IXFH14N60P

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247 IXFH20N50P3