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IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P

IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 21.34mm

GBP 12.68

1

IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P

IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 21.34mm

GBP 13.09

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.29

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.46

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.58

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.74

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 14.07

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 16.12

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 15.61

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.93

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 11.79

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.19

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 9.02

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 7.36

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 10.87

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 8.80

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm, Length: 15.8mm

GBP 6.57

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm, Length: 15.8mm

GBP 6.57

1

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.2mm

GBP 18.49

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXFK150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXFK150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 11.19

1

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.2mm

GBP 17.87

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 7.07

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 8.36

1

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 15.97

1

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IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P

IXYS N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXFK150N30P3

IXYS N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227B IXFN140N30P

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P