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DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady) NChannel) A, Maximum Drain Source Voltage: 30 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 140 (PChannel) mΩ, 90 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (NChannel) V, 2.5 (PChannel) V, Minimum Gate Threshold Voltage: 1 (NChannel) V, 1 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Height: 0.9mm, Length: 3mm, MPN: DMC3071LVT-7

GBP 0.07

1

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady) NChannel) A, Maximum Drain Source Voltage: 30 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 140 (PChannel) mΩ, 90 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (NChannel) V, 2.5 (PChannel) V, Minimum Gate Threshold Voltage: 1 (NChannel) V, 1 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Height: 0.9mm, Length: 3mm, MPN: DMC3071LVT-7

GBP 0.18

1

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady) NChannel) A, Maximum Drain Source Voltage: 20 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 (PChannel) mΩ, 91 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1 (PChannel) V, 1.2 (NChannel) V, Minimum Gate Threshold Voltage: 0.4 (NChannel) V, 0.4 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±12 V, ±8 V, Height: 0.9mm, Length: 3mm, MPN: DMC2057UVT-7

GBP 0.18

1

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady) NChannel) A, Maximum Drain Source Voltage: 20 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 (PChannel) mΩ, 91 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1 (PChannel) V, 1.2 (NChannel) V, Minimum Gate Threshold Voltage: 0.4 (NChannel) V, 0.4 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±12 V, ±8 V, Height: 0.9mm, Length: 3mm, MPN: DMC2057UVT-7

GBP 0.09

1

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady) NChannel) A, Maximum Drain Source Voltage: 30 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 140 (PChannel) mΩ, 90 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (NChannel) V, 2.5 (PChannel) V, Minimum Gate Threshold Voltage: 1 (NChannel) V, 1 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±20 (N-Channel) V, ±20 (P-Channel) V, Height: 0.9mm, Length: 3mm, MPN: DMC3071LVT-7

GBP 0.16

1

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady), Channel Type: N, P, Maximum Continuous Drain Current: 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady) NChannel) A, Maximum Drain Source Voltage: 20 V, Package Type: TSOT-26, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 (PChannel) mΩ, 91 (NChannel) mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1 (PChannel) V, 1.2 (NChannel) V, Minimum Gate Threshold Voltage: 0.4 (NChannel) V, 0.4 (PChannel) V, Maximum Power Dissipation: 1.1 W, Maximum Gate Source Voltage: ±12 (N-Channel) V, ±8 (P-Channel) V, Height: 0.9mm, Length: 3mm, MPN: DMC2057UVT-7

GBP 0.16

1

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3, Mounting Type: Through Hole, Magnetic Type: Bipolar, Maximum Operating Supply Voltage: 20 V, Minimum Operating Supply Voltage: 3.5 V, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Height: 3.2mm, Dimensions: 4.3 x 1.6 x 3.2mm, Typical Magnetic Sensor Hysteresis: 75 Gs

GBP 0.39

1

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3, Mounting Type: Through Hole, Magnetic Type: Bipolar, Latch, Maximum Operating Supply Voltage: 20 V, Minimum Operating Supply Voltage: 3.5 V, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Height: 3.2mm, Dimensions: 4.3 x 1.6 x 3.2mm, Typical Magnetic Sensor Hysteresis: 75 Gs

GBP 0.93

1

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3, Magnetic Type: Bipolar Latch, Mounting Type: Through Hole, Minimum Magnetic Sensor Release Point: -70 Gs, Minimum Operating Supply Voltage: 3.5 V, Maximum Operating Supply Voltage: 20 V, Length: 4.3mm, Width: 1.6mm, Height: 3.2mm, Dimensions: 4.3 x 1.6 x 3.2mm, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +125 °C, Typical Magnetic Sensor Hysteresis: 75 Gs

GBP 0.93

1

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 348 W, Mounting Type: Through Hole, Transistor Configuration: Single, Length: 16.26mm, Width: 5.31mm, Height: 21.46mm, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 3942pF, Maximum Operating Temperature: +175 °C

GBP 3.96

1

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 6030pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.00

1

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 348 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 3942pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.96

1

DiodesZetex DGTD65T60S2PT IGBT, 100 A, 180 (Pulsed) A 650 V, 3-Pin TO-247

DiodesZetex DGTD65T60S2PT IGBT, 100 A, 180 (Pulsed) A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 428 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 2327pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.56

1

DiodesZetex DGTD65T15H2TF IGBT, 30 A, 60 (Pulsed) A 650 V, 3-Pin ITO-220AB

DiodesZetex DGTD65T15H2TF IGBT, 30 A, 60 (Pulsed) A 650 V, 3-Pin ITO-220AB, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 48 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 10.4 x 4.8 x 16.4mm, Gate Capacitance: 1129pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 0.21

1

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 6030pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.06

1

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, Mounting Type: Through Hole, Transistor Configuration: Single, Length: 16.26mm, Width: 5.31mm, Height: 21.46mm, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 6030pF, Maximum Operating Temperature: +150 °C

GBP 5.95

1

DiodesZetex DGTD65T50S1PT IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247

DiodesZetex DGTD65T50S1PT IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 4453pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.18

1

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 348 W, Mounting Type: Through Hole, Transistor Configuration: Single, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 3942pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.29

1

DiodesZetex N-Channel MOSFET, 15.4 A, 45.4 A, 60 V, 8-Pin PowerDI3333 Diodes Inc DMTH69M8LFVWQ-7

GBP 0.51

1

DiodesZetex N-Channel MOSFET, 10 A, 20 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMN3012LEG-7

GBP 1.10

1

DiodesZetex N-Channel MOSFET, 15.4 A, 49.1 A, 40 V, 8-Pin PowerDI3333 Diodes Inc DMT47M2SFVWQ-7

GBP 0.64

1

DiodesZetex N-Channel MOSFET, 16.2 A, 98 A, 60 V, 8-Pin PowerDI5060 Diodes Inc DMT6006SPS-13

GBP 0.63

1

DiodesZetex P-Channel MOSFET, 9.8 A, 13.2 A, 8 V, 9-Pin UWLB1515 Diodes Inc DMP1007UCB9-7

GBP 0.40

1

DiodesZetex P-Channel MOSFET, 11.7 A, 76 A, 40 V, 8-Pin PowerDI5060 Diodes Inc DMP4011SPS-13

GBP 0.90

1

DiodesZetex N-Channel MOSFET, 15.4 A, 49.1 A, 40 V, 8-Pin PowerDI3333 Diodes Inc DMT47M2SFVW-7

GBP 0.40

1

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DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.6 ((State) NChannel) A, 4.6 ((Steady)

DiodesZetex Dual N/P-Channel MOSFET, 2.6 ((State) PChannel) A, 3.3 ((Steady) PChannel) A, 3.5 ((State) NChannel) A, 4 ((Steady)

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex AH1751-PG-A-A, Hall Effect Sensors, 3-Pin SIP-3

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD65T60S2PT IGBT, 100 A, 180 (Pulsed) A 650 V, 3-Pin TO-247

DiodesZetex DGTD65T15H2TF IGBT, 30 A, 60 (Pulsed) A 650 V, 3-Pin ITO-220AB

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex DGTD65T50S1PT IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247

DiodesZetex N-Channel MOSFET, 15.4 A, 45.4 A, 60 V, 8-Pin PowerDI3333 Diodes Inc DMTH69M8LFVWQ-7

DiodesZetex N-Channel MOSFET, 10 A, 20 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMN3012LEG-7

DiodesZetex N-Channel MOSFET, 15.4 A, 49.1 A, 40 V, 8-Pin PowerDI3333 Diodes Inc DMT47M2SFVWQ-7

DiodesZetex N-Channel MOSFET, 16.2 A, 98 A, 60 V, 8-Pin PowerDI5060 Diodes Inc DMT6006SPS-13

DiodesZetex P-Channel MOSFET, 9.8 A, 13.2 A, 8 V, 9-Pin UWLB1515 Diodes Inc DMP1007UCB9-7

DiodesZetex P-Channel MOSFET, 11.7 A, 76 A, 40 V, 8-Pin PowerDI5060 Diodes Inc DMP4011SPS-13

DiodesZetex N-Channel MOSFET, 15.4 A, 49.1 A, 40 V, 8-Pin PowerDI3333 Diodes Inc DMT47M2SFVW-7