ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G
ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 7V, Minimum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 53 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Height: 16.27mm