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Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2, Package Type: D2PAK (TO-263), Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 6.11

1

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2, Package Type: D2PAK (TO-263), Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 7.44

1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.022 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: StrongIRFET, MPN: IRF250P225

GBP 6.00

1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.022 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: StrongIRFET, MPN: IRF250P225

GBP 5.10

1

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8)

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: CoolMOS™ P7, MPN: IPT60R050G7XTMA1

GBP 6.13

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 5-Pin PG-VSON-4 IPL60R095CFD7AUMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 5-Pin PG-VSON-4 IPL60R095CFD7AUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2, Series: CoolMOS

GBP 4.94

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.08 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 2, Series: C7 GOLD

GBP 6.34

1

Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 1, Series: CoolMOS™ CFD7, MPN: IPW60R055CFD7XKSA1

GBP 7.69

1

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8)

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: CoolMOS™ P7, MPN: IPT60R050G7XTMA1

GBP 7.10

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.08 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 2, Series: C7 GOLD

GBP 4.44

1

Infineon N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.06 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: CoolMOS™ C7, MPN: IPW60R060C7XKSA1

GBP 4.95

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 151 A, 650 V, 5-Pin PG-VSON-4 IPL60R065P7AUMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 151 A, 650 V, 5-Pin PG-VSON-4 IPL60R065P7AUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 30V, Number of Elements per Chip: 2, Series: CoolMOS P7

GBP 6.56

1

Infineon N-Channel MOSFET, 522 A, 40 V, 7-Pin D2PAK

Infineon N-Channel MOSFET, 522 A, 40 V, 7-Pin D2PAK, Package Type: D2PAK 7pin (TO-263 7pin), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00075 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1, Series: HEXFET, MPN: AUIRFS8409-7TRL

GBP 4.57

1

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm

GBP 5.32

1

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 5.82

1

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm

GBP 5.16

1

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 5.82

1

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 4.95

1

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.51

1

Infineon N-Channel MOSFET, 350 A, 40 V, 3-Pin TO-247AC IRFP4004PBF

Infineon N-Channel MOSFET, 350 A, 40 V, 3-Pin TO-247AC IRFP4004PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm

GBP 4.51

1

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 470 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.96

1

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 580 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 5.84

1

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm

GBP 6.07

1

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 470 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.71

1

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 580 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.96

1

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Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8)

Infineon Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 5-Pin PG-VSON-4 IPL60R095CFD7AUMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1

Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin TOLL (HSOF-8)

Infineon Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP IPDD60R080G7XTMA1

Infineon N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-247

Infineon Dual N-Channel MOSFET Transistor & Diode, 151 A, 650 V, 5-Pin PG-VSON-4 IPL60R065P7AUMA1

Infineon N-Channel MOSFET, 522 A, 40 V, 7-Pin D2PAK

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF

Infineon N-Channel MOSFET, 350 A, 40 V, 3-Pin TO-247AC IRFP4004PBF

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 350 A, 75 V, 3-Pin TO-247AC IRFP4368PBF

Infineon N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF