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IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.87

1

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +175 °C

GBP 4.87

1

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.23

1

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.39

1

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 195 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.83

1

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.23

1

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.39

1

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.34mm, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.39

1

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.15

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.23

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 7.85

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 8.08

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 8.54

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.11

1

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.31mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.40

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.94

1

IXYS IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 577 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.64

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.16

1

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.08

1

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.96

1

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.63

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.61

1

IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.70

1

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IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole