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IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3

IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.23mm

GBP 19.19

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 20.65

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 23.43

1

IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3

IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.23mm

GBP 19.51

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 20.22

1

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.2mm

GBP 18.44

1

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.2mm

GBP 18.72

1

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IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXFN80N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P